A Cmos Low Voltage Class-e Power Amplifier for Umts
نویسندگان
چکیده
In this paper we design a low-voltage class-E power amplifier (PA) in a standard CMOS 0.35μm integrated technology, to be used in a UMTS transceiver having the following specifications: f=1.95 GHz, VDC=1 V, Pout=0.5 W. The designed class-E network accommodates the simultaneous presence of a parasitic ground inductance and losses in the switch and shunt-capacitor. The transistor is dimensioned for an optimum PAE (power added efficiency). Finally, we simulate the power control capabilities and highlight linearization methods.
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